^zmi-donaiictoi ij-^ioaucti,, una, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 S3700 series 5-a silicon controlled rectifiers for inverter applications features: ? 600v. 125'c tj operating ? high dv/dt and dl/dt capability ? low switching losses ? high pulse-current capability ? low forward and reverse leakage ? sipos oxide glass multilayer passivation system ? advanced unisurface construction ? precise ion-implanted diffusion source terminal designations ?ottom view mdecto-ttlaa maximum ratings./?6?ofufe-mm/mum values: non-repetitive peck raven* voltage:* gate open vmw non-repetitive peak off-state voltage:* gateopen vmm repetitive peak reverse voltage:* gate open vwhm repetitive peak off-state voltage:* gate open vdmm on-state current: tc =b5"ci conduction angle = 180": hms innnu average |tm? for other conditions peak surge (non-repetitive) on-state current: it?m for one full cycle of applied principal voltage, tc = 85'c 60 hz (sinusoidal) so hz (sinusoidal) for more than one full cycle of applied principal voltage rate of change of on-state current vd = vdmu. io7 = 50ma. t, = 0.1/ffl dl/dt fusing current (for scr protection): tj = -40 to 1wc. t = 1 to 8.3 ms m gate power dissipation:* peak forward (for 100s max.. see fig. 7) pom peak reverse (for 10/n max.. see fig, 8) pmu average (averaging time ?10 ms max.) , p0??i temperature range:f storage t? operating (case) t6 pin temperature (during soldering): at distances > 1/32 in. (0.8 mm) from seating plane for 10 s max ^^ 83700b 300 300 200 200 S3700d 500 500 400 400 83700m 700 700 600 600 .3.2 . i. 3 & 4 . .80. .65. - see fig. 5 . .200. ? these values do not apply if there is a positive gate signal. gate must be open or negatively biased. ? any product of gate current and gate voltage which results in a gate power less then the maximum is permitted, t for temperature measurement reference point, aee dimensions! outline. is is nc - - -4fl*0 1ffo -40 to 175 w ul ?/ t. ... c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
S3700 series electrical characteristics at minimum ritingi unleu othwwiw sptcifm *nd tt indictttd c?h temptraturt (tc) characteristic symbol limits for all types except u specified min. typ. max units peak off-state current: (gate open, tc=125'c) forward current (ioom) at vd - vdrom i0om reverse current (irom) at vr ? vbrqm irqm instantaneous on-state voltage: it = 30 a (peak), tc - 258c vt for other conditions instantaneous holding current: gate open, t^ - 25c critical rate of rise of off-state voltage : vd - vqrqm. exponential voltage rile, gate open, tc - 1z5c dv/dt dc gate trigger current: v0-12v(dc), rl = 30n,tc-25c igt for other conditions dc gate trigger voltage: vd = 12 v (del, rl ? 30 o, tc - 25c vgt for other conditions gate controlled turn-on time: (delay time + rile time) for vdx ? vdrom. 'gt * soo ma, t,?o.i in, t - 2 a (peak). tc = 25c (see fig. 10) circuit commutated turn-off time: i-r = 2 a, pulse duration - 50 ?s, dv/dt - 100 wi's, -di/dt = -10 a/us, ig1- - 100 ma, vgt - 0 v (at turn-off). tc - 80c (see fig. 13) .... | lq thermal resistance: junction-to-case rtfjc junction-to-amtaient r0ja 0.5 0,3 1.5 ma 2.2 3 see fig.6 20 50 rna 100 250 is 40 see fig.7 ma 1.8 | 3.5 see fig. 7 0.7 8 40 ?c/w ca/v . lcu ? llbllml murwctnt *4 fig. 1-power dissipation vs. average on-state current. fig. l-dlulpttion n. repetition ntt,
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